p-GaN HEMT 强电磁脉冲损伤效应与防护设计研究

王蕾; 柴常春; 赵天龙; 李福星; 秦英朔; 杨银堂

doi:10.19665/j.issn1001-2400.20230502

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p-GaN HEMT 强电磁脉冲损伤效应与防护设计研究

电磁空间安全专栏 | 更新时间：2024-01-22

- p-GaN HEMT 强电磁脉冲损伤效应与防护设计研究
- 暂无标题
- 西安电子科技大学学报 2023年50卷第6期页码：34-43
- 作者机构：
  
  西安电子科技大学微电子学院,陕西西安 710071
- 作者简介：
  
  [ "王蕾(1989—),女,西安电子科技大学博士研究生,E-mail:[email protected];" ]
  [ "柴常春(1960—),男,教授,E-mail:[email protected];" ]
  赵天龙(1988—),男,讲师,E-mail:[email protected]
  [ "李福星(1996—),男,西安电子科技大学博士研究生,E-mail:[email protected];" ]
  [ "秦英朔(1998—),男,西安电子科技大学硕士研究生,E-mail:[email protected];" ]
  [ "杨银堂(1962—),男,教授,E-mail:[email protected]。" ]
- 基金信息：
  
  国家自然科学基金(61974116)
- DOI：10.19665/j.issn1001-2400.20230502
  中图分类号： TN386
- 收稿日期：2023-01-14，
  
  纸质出版日期：2023-12-20
- 稿件说明：
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王蕾, 柴常春, 赵天龙, 等. p-GaN HEMT 强电磁脉冲损伤效应与防护设计研究[J]. 西安电子科技大学学报, 2023,50(6):34-43.
王蕾, 柴常春, 赵天龙, 等. p-GaN HEMT 强电磁脉冲损伤效应与防护设计研究[J]. 西安电子科技大学学报, 2023,50(6):34-43. DOI： 10.19665/j.issn1001-2400.20230502.

DOI：

摘要

如今

恶劣的电磁环境已经对电子系统的安全构成了严重威胁。氮化镓基高电子迁移率晶体管的优异性能使其更加适合于高功率

高频应用领域。随着晶体外延材料质量的不断提高和器件工艺的改进

氮化镓器件向高功率和小型化方向快速发展

器件的可靠性和稳定性受到巨大挑战。深入研究了增强型氮化镓高电子迁移率晶体管的强电磁脉冲损伤效应

通过分析器件内部多物理量分布的变化

探究其失效机理。研究结果表明

强电磁脉冲作用下器件的损伤主要是由自热效应、雪崩击穿和热载流子效应等不同的热累积效应引起的。在此基础上

进行了多重防护设计

并通过仿真研究进行了验证。结果表明

氧化铝作为钝化层材料可以增强器件的击穿特性

提高其抗电磁干扰能力;同时

也可以通过在源极和栅极串联电阻的方式提高器件的抗强电磁脉冲损伤能力。以上结论对于工作在恶劣电磁环境中氮化镓器件设计具有重要的参考意义。

Abstract

Nowadays

severe electromagnetic circumstances pose a serious threat to electronic systems.The excellent performance of gallium nitride based high electron mobility transistors makes them more suitable for high power and high frequency applications.With the continuous improvement in the quality of crystal epitaxial material and device manufacture technology

gallium nitride semiconductor devices are rapidly developing towards the direction of high power and miniaturization

which challenges the reliability and stability of devices.In this paper

the damage effects of the high power electromagnetic pulse(EMP) on the enhanced GaN high-electron-mobility transistor(HEMT) are investigated in detail.The mechanism is presented by analyzing the variation of the internal multiple physical quantities distribution in the device.It is revealed that the device damage is dominated by the different thermal accumulation effect such as self-heating

avalanche breakdown and hot carrier emission during the action of the high power EMP.Furthermore

the multi-scale protection design of the GaN HEMT against the high power electromagnetic interference(EMI) is presented and verified by simulation study.The device structure optimization results demonstrate that a proper passivation layer which enhances the breakdown characteristics can improve the anti-EMI capability.The circuit optimization presents the influences of external components on the damage progress.It is found that the resistive components which are in series at the source and gate will strengthen the capability of the device to withstand high power EMP damage.All above conclusions are important for device reliability design using gallium nitride materials

especially when the device operates under severe electromagnetic circumstances.

关键词

Keywords

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